Research articles
ScienceAsia 51S (2025):ID 2025s024 1-9 |doi:
10.2306/scienceasia1513-1874.2025.s024
Phase characterization of amorphous tin oxides
micro/nanoparticles by Raman spectroscopy
Suparoek Yarina, Siripatsorn Thanasanvorakuna, Vasan Yarangsia, Kritsada Hongsitha,b,
Wakul Bumrungsana,b, Sukrit Sucharitakula, Surachet Phadungdhitidhadaa, Supab Choopuna,*
ABSTRACT: Ramanspectroscopyisavaluabletechniqueforelucidating the phase evolution of mixed-phase amorphous
tin oxides, which is challenging to characterize due to its complex and low-crystalline structure. In this work, the
mixed phase of amorphous tin oxides was synthesized via the electrochemical process. The as-prepared tin oxides
were annealed at temperatures ranging from 100 to 500?C in both nitrogen (N2
) and air environments. The properties
of the tin oxides were investigated using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy
(SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. From the results, the XRD
patterns exhibited broad andsilent peaks, especially at temperatures below200?Cinbothenvironments, whichlimitthe
detection of phase evolution. Moreover, XPSmainlyprovidedinformationonchemicalstatesratherthantheamorphous
phase. In contrast, the Raman spectroscopy effectively identified vibration modes of the tin oxide phases, providing
direct insights into phase transformations, local bonding, and defects, even in low-crystalline systems. The results
revealed that under a sufficient ambient oxygen, amorphous SnO2
/SnO micro/nanoparticles completely transformed to
Sn2
O3
/Sn3
O4
and SnO2
at 500?C. However, the annealing at 500?C under ambient N2
resulted in the formation of SnO
combined with Sn2
O3
, Sn3
O4
, and SnO2
. These findings highlighted that the Raman spectroscopy technique is a crucial
procedure for revealing the phase of amorphous tin micro/nanoparticle oxides, providing unique and complementary
information on phase evolution and defect structure, which is critical for selecting the appropriate tin oxide phases for
p?n junction device applications.
Download PDF
Downloads Views
| a |
Department of Physics and Materials Science, Faculty of Science, Chiang Mai 50200 Thailand |
| b |
Office of Research Administration, Chiang Mai University, Chiang Mai 50200 Thailand |
* Corresponding author, E-mail: supab99@gmail.com
Received 30 Nov 2024, Accepted 0 0000
|
