Research articles
ScienceAsia 51S (2025):ID 2025s028 1-8 |doi:
10.2306/scienceasia1513-1874.2025.s028
High-performance mid-infrared supercontinuum generation
in all-anomalous-dispersion AsSe2-As2
S5 chalcogenide hybrid microstructured optical fibers
Amphon Lukboona,b, Panatcha Anusasananana, Mongkol Wannaprapac, Suksan Suwanarata,*
ABSTRACT: Mid-infrared (Mid-IR) supercontinuum (SC) generation with a large optical bandwidth and an easily
fabricated device is poised to become an enabling technology for Mid-IR SC devices. In this work, we numerically
demonstrateMid-IRSCgenerationinall-anomalousdispersionAsSe2-As2
S5
chalcogenide(ChG)hybridmicrostructured
optical fibers (HMOFs). To achieve Mid-IR SC spectra extending beyond 10 ?m, As2
S5
and AsSe2
ChG materials
were considered, owing to their high transparency in this spectral range. The optimized fiber, consisting of an AsSe2
core (radius r = 1.9 ?m) and an As2
S5
cladding (radius R = 4.4 ?m), exhibits all-anomalous dispersion with small
magnitudes ranging from +4.08 ps/nm/km to +49.78 ps/nm/km over the wavelength range from?3.2 ?m to 10 ?m
and supports a well-confined fundamental TE mode (horizontally polarized), using a two-dimensional finite-difference
eigenmode solver. Numerical simulations performed using the split-step Fourier method show that, when pumped with
200-fs pulses and a peak power of 3000 W at a wavelength 3.4 ?m, the 4.0-mm-long AsSe2-As2
S5
HMOFs can generate
SC spectra spanning from 1.7 ?m to 9.3 ?m (?40 dB bandwidth of 7600 nm). By increasing the pulse duration to
300 fs and using the same pump source, the 5.8-mm-long fiber achieves an even broader spectrum, covering 1.7 ?m
to 10.2 ?m. The nonlinear broadening mechanisms are dominated by self-phase modulation and four-wave mixing.
The demonstrated high-performance Mid-IR SC generation?combining ultra-broadband operation, compact structure,
and low-energy (< 1 pJ) pulse requirements?shows strong potential for enabling novel on-chip Mid-IR SC device
architectures.
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| a |
Department of Physics, Faculty of Science, Ramkhamhaeng University, Bangkok 10240 Thailand |
| b |
Valaya Alongkorn Rajabhat University Demonstration School, Valaya Alongkorn Rajabhat University,
Pathum Thani 13180 Thailand |
| c |
Department of Electronics Technology, Faculty of Science, Ramkhamhaeng University, Bangkok 10240 Thailand |
* Corresponding author, E-mail: suksan@ru.ac.th
Received 19 Nov 2024, Accepted 0 0000
|